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Bootstrap Diode Part
Symbol
V F
t rr
Parameter
Forward Voltage
Reverse-Recovery Time
Conditions
I F = 0.1 A, T C = 25°C
I F = 0.1 A, T C = 25°C
Min.
-
-
Typ.
2.5
80
Max.
-
-
Unit
V
ns
T C =25 C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Built-in Bootstrap Diode V F -I F Characteristic
o
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V F [V]
Figure 6. Built-in Bootstrap Diode Characteristics
2nd Notes:
6. Built-in bootstrap diode includes around 15 ? resistance characteristic.
Recommended Operating Conditions
Symbol
V PN
V CC
V BS
Parameter
Supply Voltage
Control Supply Voltage
High-Side Bias Voltage
Conditions
Applied between P - N U , N V , N W
Applied between V CC(H) , V CC(L) - COM
Applied between V B(U) - V S(U) , V B(V) - V S(V) ,
Min.
-
13.5
13.0
Typ.
300
15.0
15.0
Max.
400
16.5
18.5
Unit
V
V
V
V B(W) - V S(W)
dV CC / dt, Control Supply Variation
-1
-
1
V / ? s
dV BS / dt
t dead
Blanking Time for Preventing Each Input Signal
2
-
-
? s
Arm-Short
f PWM
V SEN
PWM Input Signal
Voltage for Current Sensing
-40 ? C ?? T C ? 125°C, -40 ? C ?? T J ?? 150°C
Applied between N U , N V , N W - COM
-
-4
-
20
4
kHz
V
(Including Surge Voltage)
?2007 Fairchild Semiconductor Corporation
FSBF5CH60B Rev. C3
8
www.fairchildsemi.com
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